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Gunn Oscillators

Standard Features:

  • High reliability and performance
  • Narrow to broadband monotonic tuning
  • Combined mechanical and varactor tuning
  • High RF output power
  • Integral heatsink
  • Micrometer tuning available

These Gunn oscillators use high Q resonator circuits to produce clean and stable output signals. Either GaAs or InP Gunn diodes are used depending on the output power and frequency requirements. InP Gunn diodes are generally used in the high frequency high power oscillators. They offer lower AM noise along with higher efficiency. The bias input contains an integral low frequency suppression filter and over voltage protection circuit. These oscillators can be used as a laboratory source, a multiplier driver, local oscillator or whenever a reliable source for the generation of millimeter-wave signals is required.

Mechanical and Fixed Tuned Gunn Oscillators

 
Frequency Range (GHz)

18-26

26-40

40-55

55-75

75-95

95-110

Power Output  (Max)(mW)

GaAs      

300

250

150

60

25

10 

InP

 

 

 

 100

65 

25

Tuning Bandwidth (Max) % of Fc

       

10

20

15

2

2

2

Frequency Stability (Typ) (MHz/oC)

GaAs

0.4

0.5

0.7 

5

InP      

 

 

 

2

4

Power Stability (Max) (dB/oC)

 

-0.04

-0.04 

-0.04 

-0.04

-0.04

-0.04

Bias Voltage (Typ) (Volts)

GaAs      

6

InP

 

 

 

12 

10 

10 

Bias Current (Typ/Max) (Amps)

GaAs      

0.8/1.4

0.8/1.4

0.8/1.4

0.8/1.4

0.7/1.3

0.7/1.3 

InP

 

 

 

0.3/0.4

0.2/0.4 

0.2/0.4 

 

Varactor Tuned Gunn Oscillators

 
Frequency Range (GHz)

18-26

26-40

40-55

55-75

75-95

95-110

Power Output  (Max)(mW)

GaAs      

200

150

75

30

15

10

InP

 

 

 

 50

30

20

Tuning Bandwidth (Max) % of Fc

       

2.5

3

4

3

3

3

Frequency Stability (Typ) (MHz/oC)

GaAs

0.8

1.0

1.5

5

5

5

InP      

 

 

 

3

4

5

Power Stability (Max) (dB/oC)

 

-0.04

-0.04 

-0.04 

-0.04

-0.04

-0.04

Bias Voltage (Typ) (Volts)

GaAs      

6

InP

 

 

 

12 

10 

10 

Bias Current (Typ/Max) (Amps)

GaAs      

0.8/1.4

0.8/1.4

0.8/1.4

0.8/1.4

0.7/1.3

0.7/1.3 

InP

 

 

 

0.3/0.4

0.2/0.4 

0.2/0.4 

The varactor tuning voltage is from the Gunn bias voltage to -20 volts (ex. +10v to -20v), or from Gunn bias voltage to +30v (ex. +5v to +30v).
When a temperature controller is used, the output power is reduced by approximately 1.5dB.
The threshold current is approximately 1.3 times the operating current. InP Gunn diodes do not exhibit a threshold current.
Storage temperature is -55oC to +125oC. The operating temperature for GaAs Gunn diodes is -55oC to +71oC. The operating temperature for InP Gunn diodes is -55oC to +60oC.

 

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