Gunn Oscillators

Standard Features:
  • High reliability and performance
  • Narrow to broadband monotonic tuning
  • Combined mechanical and varactor tuning
  • High RF output power
  • Integral heatsink
  • Micrometer tuning available

These Gunn oscillators use high Q resonator circuits to produce clean and stable output signals. Either GaAs or InP Gunn diodes are used depending on the output power and frequency requirements. InP Gunn diodes are generally used in the high frequency high power oscillators. They offer lower AM noise along with higher efficiency. The bias input contains an integral low frequency suppression filter and over voltage protection circuit. These oscillators can be used as a laboratory source, a multiplier driver, local oscillator or whenever a reliable source for the generation of millimeter-wave signals is required.

Mechanical and Fixed Tuned Gunn Oscillators

 
Frequency Range (GHz)
18-2626-4040-5555-7575-9595-110

Power Output  (Max)(mW)

GaAs 

300250150602510

InP

 1006525

Tuning Bandwidth (Max) % of Fc

  102015222

Frequency Stability (Typ) (MHz/oC)

GaAs

0.40.50.7455

InP

234

Power Stability (Max) (dB/oC)

-0.04-0.04-0.04-0.04-0.04-0.04

Bias Voltage (Typ) (Volts)

GaAs

654444

InP

121010

Bias Current (Typ/Max) (Amps)

GaAs

0.8/1.40.8/1.40.8/1.40.8/1.40.7/1.30.7/1.3

InP

0.3/0.40.2/0.40.2/0.4
 

Varactor Tuned Gunn Oscillators

 
Frequency Range (GHz)
18-2626-4040-5555-7575-9595-110

Power Output  (Max)(mW)

GaAs

20015075301510

InP

 503020

Tuning Bandwidth (Max) % of Fc

2.534333

Frequency Stability (Typ) (MHz/oC)

GaAs

0.81.01.5555

InP

345

Power Stability (Max) (dB/oC)

-0.04-0.04-0.04-0.04-0.04-0.04

Bias Voltage (Typ) (Volts)

GaAs

654444

InP

121010

Bias Current (Typ/Max) (Amps)

GaAs

0.8/1.40.8/1.40.8/1.40.8/1.40.7/1.30.7/1.3

InP

0.3/0.40.2/0.40.2/0.4
  • The varactor tuning voltage is from the Gunn bias voltage to -20 volts (ex. +10v to -20v), or from Gunn bias voltage to +30v (ex. +5v to +30v).
  • When a temperature controller is used, the output power is reduced by approximately 1.5dB.
  • The threshold current is approximately 1.3 times the operating current. InP Gunn diodes do not exhibit a threshold current.
  • Storage temperature is -55oC to +125oC. The operating temperature for GaAs Gunn diodes is -55oC to +71oC. The operating temperature for InP Gunn diodes is -55oC to +60oC.